发明名称 Method and apparatus for run-to-run control of deposition process
摘要 A method and an apparatus for controlling a deposition process in a manufacturing process. A process recipe setting step is performed. A process run of semiconductor devices is performed based upon the process recipe. Metrology data relating to the process run of semiconductor dev determination is made whether production results are within a predetermined tolerance level, based upon the metrology data. Process recipe settings are modified in response to a determination that the production results are within a predetermined tolerance level, based upon the metrology data. A processing tool is capable of receiving at least one control input parameter and a metrology data acquisition unit is interfaced with the processing tool and is capable of acquiring metrology data from the processing tool. A production data analysis unit is interfaced with the metrology data acquisition unit and is capable of analyzing the metrology data from the metrology data acquisition unit and a control input parameter adjustment unit is interfaced with the production data analysis unit and the processing tool and is capable of performing adjustments upon the control input parameter.
申请公布号 US6650957(B1) 申请公布日期 2003.11.18
申请号 US20000476696 申请日期 2000.01.03
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CAMPBELL WILLIAM JARRETT;SONDERMAN THOMAS;CHRISTIAN CRAIG W.
分类号 G05B19/418;(IPC1-7):G06F19/00 主分类号 G05B19/418
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