发明名称 |
Method and apparatus for run-to-run control of deposition process |
摘要 |
A method and an apparatus for controlling a deposition process in a manufacturing process. A process recipe setting step is performed. A process run of semiconductor devices is performed based upon the process recipe. Metrology data relating to the process run of semiconductor dev determination is made whether production results are within a predetermined tolerance level, based upon the metrology data. Process recipe settings are modified in response to a determination that the production results are within a predetermined tolerance level, based upon the metrology data. A processing tool is capable of receiving at least one control input parameter and a metrology data acquisition unit is interfaced with the processing tool and is capable of acquiring metrology data from the processing tool. A production data analysis unit is interfaced with the metrology data acquisition unit and is capable of analyzing the metrology data from the metrology data acquisition unit and a control input parameter adjustment unit is interfaced with the production data analysis unit and the processing tool and is capable of performing adjustments upon the control input parameter.
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申请公布号 |
US6650957(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20000476696 |
申请日期 |
2000.01.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CAMPBELL WILLIAM JARRETT;SONDERMAN THOMAS;CHRISTIAN CRAIG W. |
分类号 |
G05B19/418;(IPC1-7):G06F19/00 |
主分类号 |
G05B19/418 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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