| 摘要 |
A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system. The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.
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