| 摘要 |
A semiconductor device having: an underlie having a semiconductor surface capable of growing thereon single crystal; and a first semiconductor layer, the first semiconductor layer including: a first region of group III-V compound semiconductor epitaxially grown on generally the whole area of the semiconductor surface; and second regions of group III-V compound semiconductor disposed and scattered in the first region, the second region having a different composition ratio of constituent elements from the first region, wherein lattice constants of the first and second regions in no strain state differ from a lattice constant of the semiconductor surface, and a difference between the lattice constant of the second region in no strain state and the lattice constant of the semiconductor surface is greater than a difference between the lattice constant of the first region in no strain state and the lattice constant of the semiconductor surface. A semiconductor device having a quantum box structure is provided capable of being manufactured by relatively simple processes. |
