| 摘要 |
PURPOSE: A high voltage device and a method for manufacturing the same are provided to be capable of obtaining an independent breakdown voltage characteristic corresponding to each thickness of an epitaxial layer, decreasing 'on'-resistance without the reduction of breakdown voltage, and reducing manufacturing processes. CONSTITUTION: A high voltage device is provided with the first conductive type semiconductor substrate(100), the second conductive type buried layer(110) formed at the predetermined portion of the semiconductor substrate, an epitaxial layer(130) formed at the upper portion of the buried layer, and the first conductive type well(150) formed in the epitaxial layer. The high voltage device further includes the second conductive type well(160) formed at both sides of the first conductive type well, a drift region(170) formed at the predetermined portion of the resultant structure, gate isolating layers(180a,180b) formed at the predetermined portion of the drift region, and a gate(190) formed at the upper portion of the gate isolating layers. Preferably, a breakdown voltage is controlled according to the thickness of the epitaxial layer located between the first conductive type well and the second conductive type buried layer.
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