PHASE CHANGEABLE MEMORY CELL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A phase changeable memory cell and a manufacturing method thereof are provided to be capable of minimizing thermal interference phenomenon between neighboring cells and increasing thermal transmission path between the neighboring cells. CONSTITUTION: A phase changeable memory cell is provided with a lower interlayer dielectric formed at the upper portion of a semiconductor substrate, a plurality of first information storing elements(74a) two-dimensionally arrayed at the predetermined positions of the upper portion of the lower interlayer dielectric, and a middle interlayer dielectric formed at the upper portion of the resultant structure. The phase changeable memory cell further includes a plurality of second information storing elements(84a) two-dimensionally arrayed at the predetermined positions of the upper portion of the middle interlayer dielectric and a plate electrode(89) formed at the upper portion of the first and second information storing elements. At this time, the plate electrode is electrically connected with the first and second information storing elements.