| 摘要 |
PURPOSE: A method for manufacturing a landing plug of a semiconductor device by using a selective epitaxial growth is provided to be capable of simplifying manufacturing processes and improving manufacturing yield. CONSTITUTION: After forming an isolation layer at a semiconductor substrate(100), a gate oxide layer and a word line are formed at the upper portion of the semiconductor substrate. Then, the first mask pattern is formed on the resultant structure. A gap fill insulating layer(116) is formed between word lines. At this time, the gap fill insulating layer is formed by carrying out a selective epitaxial growth. After removing the first mask pattern from the resultant structure, the second mask pattern is formed on the resultant structure. A landing plug connected with a source/drain region, is formed by forming a conductive layer(122) between word lines.
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