| 摘要 |
PROBLEM TO BE SOLVED: To improve circuit structure for reading and evaluating the memory state in a semiconductor memory cell. SOLUTION: A differential current evaluation circuit (SBS) is provided with input section resistance adjusting means (MIN, MINB) of a differential amplifier (DV) and a current evaluation circuit (SBS). These means (MIN, MINB) are connected to the output parts (outp, outn) and the input parts (inn, inp) of the differential amplifier (DV) and signal lines (BL, BLB), which are electrically connected also to the input parts (inn, inp) of the differential amplifier (DV). A sense amplifier circuit (LV) is provided with a circuit part (ST2). The differential current evaluation circuit (SBS) and the sense amplifier circuit (LV) are arranged in circuit structure for reading and evaluating the memory state of a semiconductor memory cell. A current evaluation circuit is activated, before a reading process and automatically inactivated, immediately after finishing the reading process by a circuit (STAD) for automatic inactivation. COPYRIGHT: (C)2004,JPO
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