| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition system by which stable sputtering can be maintained even in the case of a necessary and sufficient gas feed rate and also uniform film deposition can be carried out even in the case of a large area. SOLUTION: In the thin film deposition system, a target 4 and a substrate 7 are disposed in a manner to be opposed to each other in a vacuum chamber 3 and a gas feed nozzle 2 for introducing inert gas (or inert gas and reactive gas) is disposed in the vicinity of the target, and, while introducing the inert gas (or the inert gas and the reactive gas) from the nozzle 2, a thin film composed of a target constituent (or a compound of the target constituent and the reactive gas) is deposited onto the substrate 7 by sputtering. This thin film deposition system is provided with a structure where the conductance of an electrical discharge space P can be made adjustable by setting a void D between a mask 1 disposed in the vicinity of the substrate and the gas feed nozzle 2. COPYRIGHT: (C)2004,JPO
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