| 摘要 |
PROBLEM TO BE SOLVED: To provide a DFB semiconductor laser device oscillated by a single wavelength. SOLUTION: A DFB laser device 100 is provided with an n-type InP substrate 101, V grooves 102 having specific periods, diffraction regions 103 composed of InNAsP and formed so as to be padded in respective V grooves 102, an n-type InP clad layer 104, an active region 105, and a p-type In clad layer 106. The active region 105 has multiple-quantum well structure and its absorption end wavelength is 1.55μm. The diffraction regions 103 are formed so as to be embedded in the V grooves 102 and each of their absorption end wavelengths is 1.60μm. Since the diffraction regions 103 have the functions for absorbing light radiated from the active region 105, the laser oscillation of a single wavelength can be obtained. COPYRIGHT: (C)2004,JPO
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