| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose operating speed is high, and whose power consumption is low. SOLUTION: An n<SP>-</SP>epitaxial layer 2, p<SP>-</SP>channel layer 3, and n<SP>+</SP>source layer 4 are successively formed on a silicon substrate 1, and p<SP>+</SP>layers 5 are formed so that the n<SP>+</SP>source 4 can be parted at fixed intervals. A trench 6 is formed reading the middle of the thickness direction of the n<SP>-</SP>layer 2 through the n<SP>+</SP>source layer 4 and the p<SP>-</SP>channel layer 3 between the adjacent two p<SP>+</SP>layers 5. A gate oxide film 7 is formed in the neighborhood of the inside wall face of the trench 6 and on the n<SP>+</SP>source layer 4. A gate electrode 10 is formed to fill the trench 6. The gate electrode 10 contains a polysilicon layer 8 disposed so as to be brought into contact with the gate oxide film 7 and a low resistance layer 9 made of W (tangsten). COPYRIGHT: (C)2004,JPO
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