SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, OPTICAL FIBER AMPLIFIER, AND METHOD FOR SELECTING SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor laser device prevented from generating induced Brillouin scattering. SOLUTION: An n-InP buffer layer 2, a GRIN-SCH-MQW active layer 3 and a p-InP spacer layer 4 are laminated on the surface of an n-InP substrate 1. A p-InP blocking layer 8 and an n-InP blocking layer 9 are laminated adjacently to the upper region of the buffer layer 2, the active layer 3 and the spacer layer 4. A p-InP clad layer 6, a p-GaInAsP contact layer 7 and a p-side electrode 10 are laminated on the spacer layer 4 and the blocking layer 9, and an n-side electrode 11 is arranged on the rear surface of the substrate 1. A diffraction grating 13 is arranged in the spacer layer 4 to select light having ten or more, preferably eighteen or more, oscillation vertical modes each having a differential value of 10 dB or less relative to the maximum light intensity of the oscillation vertical mode. COPYRIGHT: (C)2004,JPO