| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method in which no deposition is left when etching an inorganic film to which a heat resistant polymer protection film is applied. <P>SOLUTION: In a semiconductor manufacturing method that comprises forming an inorganic film on the surface of a semiconductor element, applying a heat resistant polymer protection film on the inorganic film, patterning the protection film, and then performing the dry-etching of the exposed inorganic film; the dry-etching is performed by mixed gas consisting of fluorinated methane and oxygen or hydrogen. The fouorinated methane is selected from tetrafluoromethane, trifluoromethane, difluoromethane, and fluoromethane. <P>COPYRIGHT: (C)2004,JPO |
