发明名称 SEMICONDUCTOR DIODE HIGH-FREQUENCY SIGNAL GENERATOR
摘要 A microwave or high-frequency amplifier or frequency converter is disclosed which exploits avalanche phenomena in a semiconductor high-efficiency mode diode placed in a multiply tuned waveguide transmission line circuit. The novel configuration features means substantially avoiding loss of power within the circuit when high frequency or microwave energy is not present in the circuit; such energy may be efficiently amplified or converted when actually present in the circuit.
申请公布号 US3646357(A) 申请公布日期 1972.02.29
申请号 USD3646357 申请日期 1970.03.27
申请人 SPERRY RAND CORP. 发明人 MARTIN I. GRACE
分类号 H03B19/18;H03F3/10;(IPC1-7):H03F3/10 主分类号 H03B19/18
代理机构 代理人
主权项
地址