Photoelectric semiconductor device - producing infrared radiation in case of x-ray incidence

摘要

A photoelectric semiconductor device with a sensitivity to X-rays consists of a CdSe semiconductor base with strip electrodes of indium and a fluorescent layer of CdBr2 or CdS/ZnS, covered by a reflecting layer. The semiconductor is infrared -sensitive and the fluorescent material is matched to it so that fluorescence occurs in the infrared range when radiated by X-rays.