| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of reducing the resistance of a current without increasing light absorption and to provide a method for manufacturing the semiconductor laser. SOLUTION: In the surface-emitting semiconductor laser, an optical resonator 11a is constituted by holding a light emitting layer 3 between a 1st multilayer semiconductor film mirror 2 and a 2nd multilayer semiconductor film mirror 4 reversely conductive to that of the 1st mirror 2, and is cylindrically laminated on the surface of an insulating substrate 50. A 1st buried layer 12a having the same conductive type as that of the 1st mirror 2 is brought into contact with a 2nd buried layer 16 having the same conductive type as that of the 2nd mirror 4, in an interface parallel with the side faces of the resonator 11a. These two are also brought into contact with side faces of the resonator 11a to surround the side faces of the resonator 11a. COPYRIGHT: (C)2004,JPO
|
