| 摘要 |
PROBLEM TO BE SOLVED: To provide a delta-doped transistor structure wherein the thermal diffusion of delta-doping Si in a GaAs crystal which is caused by a heat history is suppressed and a steep doping profile is obtained, in order to obtain the delta-doped transistor having high mutual conductance while suppressing a gate leakage current. SOLUTION: The delta-doped transistor structure comprises a buffer layer 2 made of GaAs and having neutral conductivity, a first electron feeding layer 3 made of InP and having neutral conductivity, an Si-delta-doped layer 4 formed by a delta-doping method, a second electron feeding layer 5 made of InP and having neutral conductivity, and a barrier layer 6 made of GaAs and having neutral conductivity. Further, the layers are laminated in the order of the buffer layer 2, the first electron feeding layer 3, the Si-delta-doped layer 4, the second electron feeding layer 5, and the barrier layer 6. COPYRIGHT: (C)2004,JPO
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