| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a bonding property by increasing an interfacial characteristic between a crystal based semiconductor and an amorphous based semiconductor thin film. <P>SOLUTION: In the method for manufacturing a photovoltaic device, an n-type single crystal silicon substrate 11 and a p-type amorphous silicon thin film 13 are laminated via an i-type amorphous silicon thin film 12, and an n-type amorphous silicon layer 15 is arranged on the backside of the single crystal silicon substrate 11 by interposing an i-type amorphous silicon layer 14. Plasma discharge is generated on the surface of the single crystal silicon substrate 11 by using mixed gas containing a hydrogen gas and boron, and the surface of the single crystal silicon substrate 11 is subjected to plasma treatment. After that, the i-type amorphous silicon layer 12 is formed, and boron atoms are interposed in an interface between the single crystal silicon substrate 11 and the i-type amorphous silicon layer 12. <P>COPYRIGHT: (C)2004,JPO</p> |
