| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic cell which utilizes semiconductor pn junction for converting ultraviolet radiation to electric power, and a method of manufacturing the same. <P>SOLUTION: The photovoltaic cell comprises a semiconductor layer for forming a pn junction having an energy gap of 3 eV or larger. The pn junction is formed on a substrate using a layer of a p-type semiconductor selected from a copper-aluminum oxide, copper-gallium oxide, copper-indium oxide, copper- chromium oxide, copper-scandium oxide, copper-yttrium oxide, silver-indium oxide, and strontium-copper oxide; and a layer of an n-type semiconductor selected from a tin oxide, indium oxide, titanium oxide, zinc oxide, gallium nitride, and copper-indium oxide. Lead wires are connected to the p-type layer and the n-type layer. <P>COPYRIGHT: (C)2004,JPO</p> |
