| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a system for programming a core cell in a storage device without over-programming. <P>SOLUTION: The method for programming the threshold voltage level of the core cell in the storage device includes the steps of determining a desired threshold voltage for the core cell, programming a portion of the threshold voltage of the core cell using a selected programming strength, verifying that the portion of the threshold voltage is successfully programmed, adjusting the selected programming strength, and repeating the step of programming, verifying, and adjusting until the threshold voltage of the core cell is substantially equal to the desired threshold voltage. <P>COPYRIGHT: (C)2004,JPO</p> |
