发明名称 PHOTOMASK, METHOD FOR MAKING UP THE SAME AND PATTERN FORMING METHOD USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To simultaneously increase the fineness of an isolated space pattern and the fineness of an isolated line pattern or the fineness of a dense pattern. <P>SOLUTION: A phase shifting film 11 which transmits exposure light at a low transmittance after phase inversion is formed on the upper region of a transparent substrate 10 except a light transmissive portion forming region (opening forming region). The opening forming region and its peripheral part in the transparent substrate 10 are hollowed out by such a thickness as to cause phase inversion to exposure light to form a light transmissive portion (opening). The peripheral part of the opening in the phase shifting film 11 is overhang. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003322950(A) 申请公布日期 2003.11.14
申请号 JP20020128045 申请日期 2002.04.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MITSUSAKA AKIO
分类号 G03F1/29;G03F1/32;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/29
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