| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electrode plate for a liquid crystal display, by which the deterioration in the characteristics of a TFT element can be suppressed even when a color filter is formed at low substrate temperature at which a color filter is not discolored, when the TFT element is formed on a glass substrate on which the color filter is formed. <P>SOLUTION: The TFT element 30 is formed by film-depositing SiNx on a gate electrode 33 at a temperature equal to or lower than the heat resistant temperature of the color filter by a plasma CVD method, annealing the SiNx by using a pulse laser beam under reduced pressure of hydrogen to form a gate insulation film 34, film-depositing an a-Si: H film at a temperature equal to or lower than the heat resistant temperature of the color filter by a light- assisted plasma CVD method and annealing the a-Si: H film by using a pulse laser beam under reduced pressure of hydrogen to form a semiconductor layer 35. <P>COPYRIGHT: (C)2004,JPO |
