发明名称 Semiconductor device with chamfered substrate and method of making the same
摘要 A semiconductor device includes an insulating substrate, a cutout formed in side surfaces of the substrate, a conductive pad formed on the obverse surface of the substrate, an electrode formed on the reverse surface of the substrate, a semiconductor chip mounted on the substrate, and a connector which connects the pad to the electrode. The connector is arranged in the cutout.
申请公布号 US2003209788(A1) 申请公布日期 2003.11.13
申请号 US20030457637 申请日期 2003.06.09
申请人 ROHM CO., LTD. 发明人 KOBAYAKAWA MASAHIKO
分类号 H01L23/28;H01L21/56;H01L23/12;H01L23/31;H01L23/498;H01L23/50;H05K3/34;(IPC1-7):H01L21/44;H01L21/48 主分类号 H01L23/28
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