METHOD FOR FORMING CONDUCTIVE VIA OF SUBSTRATE FOR SEMICONDUCTOR PACKAGE

摘要

PURPOSE: A method for forming a conductive via of a substrate for a semiconductor package is provided to be capable of forming a fine pitch line pattern by reducing the thickness of a copper thin film. CONSTITUTION: After forming a material layer at the upper and lower surface of an insulating layer(2), a cover film(10) is attached to each copper thin film. At this time, each material layer is coated with a copper thin film(4,6). A plurality of through holes(8) are then formed through the material layer and the cover film at the resultant structure. An electroless plating layer(12) is then formed on the inner surface of each through hole. Then, an electrolyte plating layer(14) is formed on the surface of the electroless plating layer. The cover films are removed from the material layer.