| 摘要 |
The object of the present invention is to provide a wafer processing method for forming ultra thin SOI and thick BOX films by implanting oxygen ion beams with different energy levels in the same silicon wafer at a low accelerating voltage. To solve this subject, the oxygen ion beams with different energy levels are irradiated in the same wafer. According to the configuration mentioned above, the SIMOX wafer including the SOI and BOX films, either of which has the same thickness, can be manufactured at a lower accelerating voltage, half of the conventional one, providing economical implantation apparatus.
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