| 发明名称 |
Method for forming a retrograde implant |
| 摘要 |
A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
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| 申请公布号 |
US2003211715(A1) |
申请公布日期 |
2003.11.13 |
| 申请号 |
US20030421969 |
申请日期 |
2003.04.23 |
| 申请人 |
BROWN JEFFREY S.;COLWILL BRYANT C.;HOOK TERENCE B.;HOYNIAK DENNIS |
发明人 |
BROWN JEFFREY S.;COLWILL BRYANT C.;HOOK TERENCE B.;HOYNIAK DENNIS |
| 分类号 |
H01L21/265;H01L21/266;H01L21/8234;H01L21/8238;(IPC1-7):H01L21/04 |
主分类号 |
H01L21/265 |
| 代理机构 |
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