| 摘要 |
A method of growing single-crystals of a cubic (zinc blende) form of gallium nitride, the method comprising the steps of: placing into a reaction tube or acid resistant vessel a gallium source, anhydrous ammonia, an acid mineralizer and a metal halide salt selected from the group consisting of alkali metal halides, copper halides, tin halides, lanthanide halides and combinations thereof; closing said reaction tube or vessel; heating said reaction tube; cooling said reaction tube or vessel; and collecting single-crystals of cubic (zinc blende) form of GaN; wherein said reaction tube or vessel has a temperature gradient with a hot zone of at least 250° C., wherein said reaction tube or vessel has a temperature gradient with a cool zone of at least 150° C., and wherein said acid mineralizer has a sufficient concentration to permit chemical transport of GaN in said reaction tube or vessel from said hot zone to said cool zone due to said temperature gradient within said reaction tube or vessel.
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