| 摘要 |
<p>A bond pad structure formed over a predetermined area of an IC substrate comprising quickly and easily removable redundancy and passivation layers upon lithography and plasma etching in a plasma containing Cl2, the bond structure comprising: an liner or lower metal layer formed on a predetermined area of the IC substrate; a aluminum-based metal layer formed on the liner layer as the last metal layer for bond purposes; a tungsten based redundancy layer formed on top of the aluminum-based last metal layer; and a passivation layer formed over the IC substrate and on the tungsten based redundancy layer.</p> |
