发明名称 |
Method for reducing surface defects in an electrodeposition process |
摘要 |
A method for in-situ cleaning an electrodeposition surface following an electroplating process including providing a first electrode assembly and a second electrode assembly; applying a first current density across the first electrode assembly and the second electrode assembly for carrying out the electrodeposition process; carrying out the electrodeposition process to electrodeposit a metal onto an electrodeposition surface of the second electrode assembly; and, applying a second current density having a second polarity reversed with reference to the first polarity across the first electrode assembly and the second electrode assembly the second current density having a relatively lower current density compared to the first current density.
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申请公布号 |
US2003209444(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20020141277 |
申请日期 |
2002.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SU HUNG-WEN;CHOU SHIH-WEI;HSIEH CHING-HUA;SHUE SHAU-LIN |
分类号 |
C25D7/12;(IPC1-7):C25D7/12 |
主分类号 |
C25D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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