发明名称 Method for reducing surface defects in an electrodeposition process
摘要 A method for in-situ cleaning an electrodeposition surface following an electroplating process including providing a first electrode assembly and a second electrode assembly; applying a first current density across the first electrode assembly and the second electrode assembly for carrying out the electrodeposition process; carrying out the electrodeposition process to electrodeposit a metal onto an electrodeposition surface of the second electrode assembly; and, applying a second current density having a second polarity reversed with reference to the first polarity across the first electrode assembly and the second electrode assembly the second current density having a relatively lower current density compared to the first current density.
申请公布号 US2003209444(A1) 申请公布日期 2003.11.13
申请号 US20020141277 申请日期 2002.05.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 SU HUNG-WEN;CHOU SHIH-WEI;HSIEH CHING-HUA;SHUE SHAU-LIN
分类号 C25D7/12;(IPC1-7):C25D7/12 主分类号 C25D7/12
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