发明名称 |
Multiple thickness semiconductor interconnect and method therefor |
摘要 |
A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.
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申请公布号 |
US2003209779(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20020141714 |
申请日期 |
2002.05.09 |
申请人 |
YU KATHLEEN C.;STROZEWSKI KIRK J.;FARKAS JANOS;SANCHEZ HECTOR;LII YEONG-JYH T. |
发明人 |
YU KATHLEEN C.;STROZEWSKI KIRK J.;FARKAS JANOS;SANCHEZ HECTOR;LII YEONG-JYH T. |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/528;(IPC1-7):H01L29/00;H01L23/48 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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地址 |
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