发明名称 |
Controlled neck growth process for single crystal silicon |
摘要 |
A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly redueing the pull rate at least once during the growth of a neck portion of the single crystal silicon ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.
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申请公布号 |
US2003209186(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20020204654 |
申请日期 |
2002.11.04 |
申请人 |
HAGA HIROYO;KOJIMA MAKOTO;SAGA SHIGEMI |
发明人 |
HAGA HIROYO;KOJIMA MAKOTO;SAGA SHIGEMI |
分类号 |
C30B15/00;C30B15/22;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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