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发明名称
Verfahren zur Herstellung eines Substrats für eine IC-Karte
摘要
申请公布号
DE69529252(T2)
申请公布日期
2003.11.13
申请号
DE1995629252T
申请日期
1995.07.20
申请人
HITACHI MAXELL, LTD.;MAXELL SEIKI, LTD.
发明人
ONISHI, MASAYOSHI;KEGAI, SEIJI;OZAKI, KOICHI;TAMADA, KANAME;TAKAGI, HIROYOSHI
分类号
B42D15/10;B29C45/38;B29C45/56;G06K19/077;H01L23/28;H05K3/28;(IPC1-7):G06K19/077;B29C45/26
主分类号
B42D15/10
代理机构
代理人
主权项
地址
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