发明名称 |
Semiconductor component with an increased breakdown voltage in the edge area |
摘要 |
A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, and the edge cell has a field plate, which is formed in a trench, with a distance between the trench of the edge cell and the trench of the immediately adjacent transistor cell being less than the distance between a trench of a transistor cell and the trench of an immediately adjacent transistor cell in the cell array.
|
申请公布号 |
US2003209757(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030402872 |
申请日期 |
2003.03.28 |
申请人 |
HENNINGER RALF;HIRLER FRANZ;KRUMREY JOACHIM;ZUNDEL MARKUS;RIEGER WALTER;POLZL MARTIN |
发明人 |
HENNINGER RALF;HIRLER FRANZ;KRUMREY JOACHIM;ZUNDEL MARKUS;RIEGER WALTER;POLZL MARTIN |
分类号 |
H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|