发明名称 |
IT-CCD and manufacturing method thereof |
摘要 |
The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without lowering withstand voltage between charge transfer electrodes. A first insulation film is formed on the surface of a silicon substrate, and inter-electrode insulation films made of silicon oxide films and charge transfer electrodes made of polycrystalline silicon films are formed on the surface of the first insulation film. The inter-electrode insulation films are formed from side walls of the polycrystalline silicon films.
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申请公布号 |
US2003209735(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030430308 |
申请日期 |
2003.05.07 |
申请人 |
MOMOSE TAKAAKI;AZUMI TEIJI |
发明人 |
MOMOSE TAKAAKI;AZUMI TEIJI |
分类号 |
H01L21/339;H01L27/148;H01L29/762;H04N5/335;H04N5/369;H04N5/372;(IPC1-7):H01L27/148 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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