发明名称 |
Thin film transistor and fabricating method thereof |
摘要 |
Thin film transistors and methods of fabricating thin film transistors having low OFF state leakage current. The OFF state leakage current reduction is achieved by using doping implantation energies such that the average penetration depth of the doping impurity into the semiconductor, the projected range Rp, is located below the surface of the semiconductor layer, and such that the concentration of impurities remaining at the surface of the semiconductor layer is relatively small.
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申请公布号 |
US2003209711(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030456587 |
申请日期 |
2003.06.09 |
申请人 |
YANG JOON-YOUNG;YEO JU-CHEON |
发明人 |
YANG JOON-YOUNG;YEO JU-CHEON |
分类号 |
G02F1/136;H01L21/336;H01L29/786;(IPC1-7):H01L29/76;H01L31/036 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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