| 摘要 |
<p>A high-sensitivity photodetector not affected by the fluctuation of an optical axis and capable of photodetecton with a uniform light quantity distribution retained, and a semiconductor exposure system using it. The photodetector (10) is disposed on the optical axis of light to be detected DL, with the light path of the light to be detected DL kept clear of a support frame (23) to allow the light to be detected DL to enter a self-contained conductive thin film (21) in its entirety. When the light to be detected DL as a short-wavelength light enters the thin film (21), part of the optical energy of the short-wavelength light is used for releasing photoelectrons to allow photocurrent equivalent to released charges to run between a detector body (20) and the ground. Light quantity attenuated at the thin film (21) and further transmission light quantity can be measured by measuring this photocurrent with an ammeter (30).</p> |
