发明名称 |
MOLECULAR WIRE CROSSBAR FLASH MEMORY |
摘要 |
A nano-scale flash memory comprises: (a) source and drain regions in a plurality of approximately parallel first wires, the first wires comprising a semiconductor material, the source and drain regions separated by a channel region; (b) gate electrodes in a plurality of approximately parallel second wires, the second wires comprising either a semiconductor material or a metal, the second wires crossing the first wires at a non-zero angle over the channel regions, to form an array of nanoscale transistors; and (c) a hot electron trap region at each intersection of the first wires with the second wires. Additionally, crossed-wire transistors are provided that can either form a configurable transistor or a switch memory bit that is capable of being set by application of a voltage. The crossed-wire transistors can be formed in a crossbar array.
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申请公布号 |
WO03094171(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
WO2003US11290 |
申请日期 |
2003.04.11 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
EATON JR, JAMES R,;KUEKES, PHILIP J, |
分类号 |
G11C11/00;G11C11/34;G11C13/02;G11C16/04;G11C17/00;H01L27/28;H01L51/00;H01L51/30;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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