发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
It is intended to ensure the connectability of wiring lines in a semiconductor device having terminals or reservoirs. Plural terminals of a cell which constitutes the semiconductor device are each formed in a shape having a length corresponding to two or more lattice points. The terminals are arranged so that one or more lattice points are interposed between adjacent terminals. Among the terminals, as to the terminals adjacent to each other in their shorter direction, it is allowable for them to partially overlap each other in their shorter direction. In this state, second-layer wiring lines are connected to the terminals via through holes, whereby reservoirs can be generated at the terminals respectively.
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申请公布号 |
US2003211719(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030431385 |
申请日期 |
2003.05.08 |
申请人 |
OHAYASHI MASAYUKI;YOKOI TAKASHI |
发明人 |
OHAYASHI MASAYUKI;YOKOI TAKASHI |
分类号 |
H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L21/8238;H01L23/52;H01L23/522;H01L23/528;H01L23/532;H01L27/04;H01L27/092;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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