| 摘要 |
A method for fabricating a gate electrode is disclosed. The present invention is provided a method to utilize the first nitrogen-containing RTP treatment to treat the substrate to form an interface diffusion barrier layer thereon. Then, the dielectric material has high dielectric constant that is deposited on the interface diffusion barrier layer to improve the thermal stability and chemical stability of the semiconductor substrate. Next, a barrier layer and a metal gate layer are sequentially formed on the dielectric layer. After a photolithography process, a gate electrode structure is formed on the semiconductor substrate. Thereafter, a surface inhibition layer is formed on sidewall of the gate electrode structure to improve the resistivity and thermal stability for metal gate layer after a second nitrogen-containing RTP treatment is performed on the gate electrode structure,
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