发明名称 Stacked local interconnect structure and method of fabricating same
摘要 A method of forming stacked local interconnects that do not extend into higher levels within a multilevel IC device for economizing space available within the IC device and increasing design flexibility. In one embodiment, the method of the present invention provides a stacked local interconnect which electrically connects a first group of interconnected electrical features with one or more additional isolated groups of interconnected electrical features or one or more isolated individual electrical features. In a second embodiment, the method of the present invention provides a stacked local interconnect which electrically connects an individual electrical feature to one or more additional isolated electrical features.
申请公布号 US2003211675(A1) 申请公布日期 2003.11.13
申请号 US20030407642 申请日期 2003.04.04
申请人 TRIVEDI JIGISH D. 发明人 TRIVEDI JIGISH D.
分类号 H01L21/768;H01L23/535;(IPC1-7):H01L21/823 主分类号 H01L21/768
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