| 摘要 |
A photolithography process and its enabling photomask that is suitable for fabricating large substrates. The photomask is comprised of a transparent substrate, a pattern on that transparent substrate, a plurality of main mask keys on side edges of the transparent substrate, and a plurality of auxiliary mask keys, each spaced apart from a corresponding main mask key. To expose a substrate, the photomask is sequentially aligned with plate keys on the substrate using the main mask keys and then the auxiliary mask keys. Alternatively, the substrate includes a plurality of main plate keys and auxiliary plate keys and the photomask includes a plurality of mask keys. To expose the substrate, the photomask is sequentially aligned with the main plate keys and then the auxiliary plate keys by using the mask keys.
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