| 摘要 |
An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al2O3 film having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 film having a thickness of 10 nm on the emitting edge face by a sputtering process. The edge reflectance at the emitting edge face is set to 10%. The high reflection multi-layer film is formed by alternatively stacking Al2O3 films and a-Si films on the rear edge face. The semiconductor laser device, which includes the low reflection film having a good chemical and thermal stability and a good resistance against chemicals on the emitting edge face, is capable of suppressing occurrence of catastrophic optical damages at the emitting edge face, thereby realizing stable operation over a long period of time. |
