| 摘要 |
A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 mum thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R<1 >and R<2 >express a monovalent organic group, and may be identical or different; "A" is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and "a", "b," and "c" satisfy the following relation; a+b+c=1, in the Formula (2), R<3>, R<4>, and R<5 >express one of a hydrogen atom and a monovalent organic group, and may be identical or different, "m" expresses an integer, and "n" expresses an integer of 1 to 5. Preferably, 0.25<=a<=O.60, and 0<=c<=0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching. |
