发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A phase adjustment circuit delays an external clock signal to generate an adjusted clock signal. A phase comparator compares phases of the external clock signal and the adjusted clock signal, and outputs a phase adjustment signal for adjusting a delay time of the phase adjustment circuit. A data output circuit outputs read data to a data terminal in synchronization with the adjusted clock signal. A data input circuit receives write data supplied to the data terminal, in synchronization with the adjusted clock signal. When performing input of the write data and output of the read data successively, switching control between the input operation of the write data and the output operation of the read data only has to be completed within one clock cycle. The clock cycle can thus be reduced to the time required for the switching control. Consequently, maximum frequency of the external clock signal can be increased.
申请公布号 US2003210577(A1) 申请公布日期 2003.11.13
申请号 US20020285425 申请日期 2002.11.01
申请人 FUJITSU LIMITED 发明人 OKUDA MASAKI;KOBAYASHI HIROYUKI
分类号 G11C11/407;G11C7/22;G11C11/4076;G11C11/409;G11C29/02;G11C29/50;(IPC1-7):G11C5/00 主分类号 G11C11/407
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