发明名称 METHOD OF TESTING SEMICONDUCTOR DEVICE
摘要 A method of testing a semiconductor device is provided. In a SEM image comparison type testing apparatus, a comparison is made between the voltage contrast of a predetermined pattern to be tested and the voltage contrast of a reference pattern to produce a comparison image containing only one of two binary contrast levels. A dimension based on contrast regions in the comparison image is measured, and a characterizing dimension varying depending on the process of manufacture of the semiconductor device is analyzed from the result of measurement.
申请公布号 US2003210062(A1) 申请公布日期 2003.11.13
申请号 US20020271540 申请日期 2002.10.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KATAYAMA TOSHIHARU
分类号 H01L21/66;G01N23/225;G01Q40/02;H01J37/26;H01L23/544;(IPC1-7):G01R31/305 主分类号 H01L21/66
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