发明名称 |
METHOD OF TESTING SEMICONDUCTOR DEVICE |
摘要 |
A method of testing a semiconductor device is provided. In a SEM image comparison type testing apparatus, a comparison is made between the voltage contrast of a predetermined pattern to be tested and the voltage contrast of a reference pattern to produce a comparison image containing only one of two binary contrast levels. A dimension based on contrast regions in the comparison image is measured, and a characterizing dimension varying depending on the process of manufacture of the semiconductor device is analyzed from the result of measurement.
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申请公布号 |
US2003210062(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20020271540 |
申请日期 |
2002.10.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATAYAMA TOSHIHARU |
分类号 |
H01L21/66;G01N23/225;G01Q40/02;H01J37/26;H01L23/544;(IPC1-7):G01R31/305 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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