发明名称 Apparatus and method for determining electrical properties of a semiconductor wafer
摘要 An apparatus for measuring an electrical property of a semiconductor wafer includes a probe having an electrically conductive tip formed at least in part of a material that is transparent to light and a probe guard disposed adjacent the electrically conductive tip. The apparatus includes a device for selectively applying a first electrical stimulus between a semiconductor wafer and the electrically conductive tip of each probe when it is positioned in spaced relation to the semiconducting material forming the semiconductor wafer, and a device for selectively applying a second electrical stimulus between the semiconductor wafer and the probe guard of each probe. A device for measuring a response of the semiconductor wafer to the electrical stimuli and for determining from the response at least one electrical property thereof is provided. A light source can be positioned to selectively emit light through the transparent material toward the semiconductor wafer.
申请公布号 US2003210066(A1) 申请公布日期 2003.11.13
申请号 US20020121130 申请日期 2002.04.11
申请人 SOLID STATE MEASUREMENTS, INC. 发明人 HOWLAND WILLIAM H.
分类号 G01R1/073;G01R1/067;G01R31/26;G01R31/28;G01R31/302;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R1/073
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