| 摘要 |
A method for manufacturing an organic thin-film transistor, comprising a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode, is disclosed, wherein the method comprises the steps of forming the gate electrode on the substrate, forming the gate insulation layer on the substrate, forming the semiconductor layer on the substrate, applying a metal particle dispersion containing metal particles on the substrate, gate insulation layer or organic semiconductor layer to form an electrode precursor layer comprised of the metal particles, and heat-fusing the metal particles in the electrode precursor layer to form the source electrode and the drain electrode.
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