| 摘要 |
<p>The invention relates to a method for modifying a metallic surface, which method comprises chemical vapour deposition on a substrate in a chamber adapted for CVD and involves at least the step o f interrupting the chemical vapour deposition by cutting off the flow of reactant gas, and where the substrate and the metallic surface form a part of a completed member and that this member during or after the interruption is subjected to a polishing of the metallic surface after depositing at least a part of the depositing metallic compound.</p> |
