Integrated memory cell used in MOSFET transistors comprises two storage cells and a trench insulation for electrically insulating the storage cells and having an electrically conducting structure and an electrically insulating casing

摘要

Integrated memory cell (1) comprises two storage cells (11, 21) and a trench insulation (15) for electrically insulating the storage cells and having an electrically conducting structure (16) and an electrically insulating casing (17). The casing electrically insulates the conducting structure from the storage cells. An Independent claim is also included for a process for the production of the integrated memory cell.