发明名称 ELECTROLYTIC POLISHING LIQUID, ELECTROLYTIC POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 <p>An electrolytic polishing method in which conductivity is enhanced without causing aggregation or precipitation of abrasive grains and good planarization is realized without causing any defect in a metal film or wiring to be polished. In the electrolytic polishing method for planarizing the surface of a metal film to be polished by sliding a polishing pad (15) on the surface of the metal film in electrolytic polishing liquid E while oxidizing, the electrolytic polishing liquid E contains at least abrasive grains and an electrolyte for sustaining charged state of the abrasive grains. Since an electrolytic polishing liquid exhibiting high conductivity is employed, a high electrolytic current level can be attained and the inter-electrode distance can be increased. Since an electrolytic polishing liquid exhibiting good dispersion state of abrasive grains is employed, such defects as residual abrasive grain or scratch are eliminated.</p>
申请公布号 WO2003092945(P1) 申请公布日期 2003.11.13
申请号 JP2003005366 申请日期 2003.04.25
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