| 摘要 |
PURPOSE: A method for removing particles existing on a metal line of a semiconductor device is provided to be capable of completely removing the particles alone from the metal line without damaging the metal line. CONSTITUTION: A semiconductor device having a metal line, is loaded into a chamber. At this time, particles are on the metal line. After flowing Ar gas into the chamber, Ar plasma is generated by applying a power of 600-1400 Watt to a source electrode and 80-200 Watt to a bias electrode at the Ar pressure of 6-15 mTorr. The particles existing on the metal line, are removed by carrying out a sputtering process using the Ar plasma. At this time, the sputtering process is carried out at the Ar flow rate of 60-150 sccm for 3-20 seconds.
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